Central Semiconductor CTLDM7120-M621H TR PBFREE

包装/外壳

TLM621H

表面安装

YES

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

20 V

Id - Continuous Drain Current

1 A

Rds On - Drain-Source Resistance

250 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Qg - Gate Charge

2.4 nC

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

1.6 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

3000

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

CTLDM7120-M621HTRPBFREE

Part Life Cycle Code

Obsolete

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.84

包装

切割胶带

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

1 A

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

1.6 W

达到SVHC

compliant