CHAMPION CMT10N60N3P

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

CMT10N60N3P

Part Life Cycle Code

接触制造商

Ihs Manufacturer

CHAMPION MICROELECTRONIC CORP

Package Description

FLANGE MOUNT, R-PSFM-T3

Risk Rank

5.76

Drain Current-Max (ID)

10 A

Number of Elements

1

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Turn-off Time-Max (toff)

190 ns

Turn-on Time-Max (ton)

100 ns

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PSFM-T3

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

10 A

漏极-源极导通最大电阻

0.75 Ω

脉冲漏极电流-最大值(IDM)

35 A

DS 击穿电压-最小值

600 V

雪崩能量等级（Eas）

500 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

201 W

反馈上限-最大值 (Crss)

10 pF