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Comchip Technology CMS23N06H8-HF
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CMS23N06H8-HF
513-CMS23N06H8-HF
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
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MOSFET N-CH 60VDS 20VGS 125A PDF
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CMS23N06H8-HF详情
Comchip Technology CMS23N06H8-HF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
8-DFN (5x6)
厂商
芯片技术
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
23A (Ta), 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
86W (Tc)
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
23 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
86 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
5000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
芯片技术
Brand
芯片技术
Qg - Gate Charge
64 nC
Rds On - Drain-Source Resistance
3.1 mOhms
RoHS
Details
Typical Turn-Off Delay Time
105 ns
Id - Continuous Drain Current
23 A
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3.1mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250μA
输入电容(Ciss)(Max)@Vds
3467 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
64 nC @ 10 V
上升时间
62 ns
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
CMS23N06H8-HF拓展信息
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