Comchip Technology CMS45N10H8-HF

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

P-PAK (5x6)

厂商

芯片技术

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

94.7W (Tc)

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

16.6 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

94.7 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

芯片技术

Brand

芯片技术

Qg - Gate Charge

16.2 nC

Rds On - Drain-Source Resistance

20 mOhms

RoHS

Details

Typical Turn-Off Delay Time

75.5 ns

Id - Continuous Drain Current

45 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

20mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250μA

输入电容(Ciss)(Max)@Vds

1003.9 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

16.2 nC @ 10 V

上升时间

3.8 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET