Diodes Incorporated DMN33D8LV-7

工厂交货时间

16 Weeks

包装/外壳

SOT-363-6

安装类型

表面贴装

供应商器件包装

SOT-563

Manufacturer Part Number

DMN33D8LV-7

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Risk Rank

5.6

Reflow Temperature-Max (s)

30

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

2.9 ns

Vgs th - Gate-Source Threshold Voltage

800 mV

Pd - Power Dissipation

430 mW

Transistor Polarity

N-Channel, NPN

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Channel Mode

Enhancement

Brand

Diodes Incorporated

Qg - Gate Charge

1.25 nC

Rds On - Drain-Source Resistance

2.4 Ohms

Typical Turn-Off Delay Time

18.2 ns

Id - Continuous Drain Current

350 mA

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

350mA (Ta)

厂商

Diodes Incorporated

Product Status

活跃

包装

切割胶带

操作温度

-55°C ~ 150°C (TJ)

系列

-

JESD-609代码

e3

端子表面处理

Matte Tin (Sn)

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

配置

Dual

通道数量

2 Channel

功率 - 最大

430mW (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

2.4Ohm @ 250mA, 10V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 100µA

输入电容(Ciss)(Max)@Vds

48pF @ 5V

门极电荷(Qg)(最大)@Vgs

1.23nC @ 10V

上升时间

2.6 ns

漏源电压 (Vdss)

30V

产品类别

MOSFET

晶体管类型

2 N-Channel

场效应管特性

Standard

产品类别

MOSFET