Diodes Incorporated DMP21D0UFB4-7R

工厂交货时间

16 Weeks

表面安装

YES

安装类型

表面贴装

包装/外壳

3-XFDFN

供应商器件包装

X2-DFN1006-3

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

DMP21D0UFB4-7R

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Package Description

CHIP CARRIER, R-PBCC-N3

Risk Rank

1.77

Drain Current-Max (ID)

1.17 A

Moisture Sensitivity Levels

1

Number of Elements

1

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

CHIP CARRIER

Reflow Temperature-Max (s)

30

Continuous Drain Current Id

1.17

Vds - Drain-Source Breakdown Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

990 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Brand

Diodes Incorporated

Qg - Gate Charge

1.5 nC

Rds On - Drain-Source Resistance

495 mOhms

Id - Continuous Drain Current

770 mA

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

770mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

厂商

Diodes Incorporated

Power Dissipation (Max)

430mW (Ta)

Product Status

活跃

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

系列

-

JESD-609代码

e4

端子表面处理

Nickel/Palladium/Gold (Ni/Pd/Au)

附加功能

FAST SWITCHING, LOW THRESHOLD

子类别

MOSFETs

技术

Si

端子位置

BOTTOM

终端形式

无铅

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

JESD-30代码

R-PBCC-N3

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

990

箱体转运

DRAIN

场效应管类型

P-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

495mOhm @ 400mA, 4.5V

不同 Id 时 Vgs(th)（最大值）

1V @ 250µA

输入电容(Ciss)(Max)@Vds

76.5 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

1.5 nC @ 8 V

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

极性/通道类型

P-CHANNEL

产品类别

MOSFET

漏极-源极导通最大电阻

0.495 Ω

DS 击穿电压-最小值

20 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

反馈上限-最大值 (Crss)

10.7 pF

环境耗散-最大值

0.099 W

产品类别

MOSFET