Diodes Incorporated DMT15H017LPS-13

工厂交货时间

24 Weeks

表面安装

YES

包装/外壳

PowerDI5060-8

安装类型

表面贴装

供应商器件包装

PowerDI5060-8

终端数量

5

晶体管元件材料

SILICON

Manufacturer Part Number

DMT15H017LPS-13

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Risk Rank

1.72

Drain Current-Max (ID)

58 A

Number of Elements

1

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

小概要

Continuous Drain Current Id

58

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

150 V

Typical Turn-On Delay Time

10.5 ns

Vgs th - Gate-Source Threshold Voltage

2.6 V

Pd - Power Dissipation

1.3 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003422 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Brand

Diodes Incorporated

Qg - Gate Charge

50 nC

Rds On - Drain-Source Resistance

17.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

44.6 ns

Id - Continuous Drain Current

9.4 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

9.4A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Diodes Incorporated

Power Dissipation (Max)

1.3W (Ta)

Product Status

活跃

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

系列

Automotive, AEC-Q101

子类别

MOSFETs

技术

Si

端子位置

DUAL

终端形式

FLAT

Reach合规守则

unknown

JESD-30代码

R-PDSO-F5

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

89

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

17.5mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.6V @ 250µA

输入电容(Ciss)(Max)@Vds

3369 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

50 nC @ 10 V

上升时间

16.3 ns

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

最大漏极电流 (Abs) (ID)

58 A

漏极-源极导通最大电阻

0.0255 Ω

脉冲漏极电流-最大值(IDM)

230 A

DS 击穿电压-最小值

150 V

信道型

N通道

雪崩能量等级（Eas）

315.4 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

89 W

场效应管特性

-

产品类别

MOSFET