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技术文档

价格梯度
内地含税价
1
¥6.738908
10
¥6.357464
100
¥5.997603
500
¥5.658115
1000
¥5.337844
Diodes Incorporated DXTP07060BFGQ-7
- 收藏
- 对比
DXTP07060BFGQ-7
671-DXTP07060BFGQ-7
晶体管 - 双极性晶体管(BJT)- 单个
8-PowerVDFN
大陆
立即发货

PWR MID PERF TRANSISTOR POWERDI3
--最小包装量--
¥
总价: ¥
DXTP07060BFGQ-7详情
Diodes Incorporated DXTP07060BFGQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
8-PowerVDFN
供应商器件包装
PowerDI3333-8 (SWP) Type UX
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
3 A
Transistor Polarity
NPN
Package Type
PowerDI3333-8
Maximum Collector Emitter Voltage
-60 V
Maximum DC Collector Current
3 A
Minimum DC Current Gain
100
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Factory Pack QuantityFactory Pack Quantity
2000
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
RoHS
Details
Emitter- Base Voltage VEBO
7 V
Pd - Power Dissipation
3.4 W
Maximum Operating Temperature
+ 175 C
DC Collector/Base Gain hfe Min
100
Collector-Emitter Saturation Voltage
82 mV
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
140 MHz
Collector- Emitter Voltage VCEO Max
60 V
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 175°C (TJ)
包装
切割胶带
子类别
Transistors
技术
Si
引脚数量
8
配置
Single
功率耗散
300
功率 - 最大
1.1 W
产品类别
BJTs - Bipolar Transistors
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
100 @ 500mA, 2V
最大集极截止电流
20nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
500mV @ 300mA, 3A
电压 - 集射极击穿(最大值)
60 V
转换频率
100
频率转换
140MHz
集电极基极电压(VCBO)
80 V
连续集电极电流
500
产品类别
Bipolar Transistors - BJT
DXTP07060BFGQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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