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'irf9540'

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产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	触点镀层	底架	安装类型	包装/外壳	表面安装	引脚数	供应商器件包装	质量	终端数量	晶体管元件材料	外壳材料		Case1	Certificates		Characteristics	Chip					Drain current		Drain Source On Resistance (RDS(on)@Vgs,Id)	Drain Source Voltage (Vdss)		Drain-source voltage			Gate Threshold Voltage (Vgs(th)@Id)	Gate-source voltage		Gross weight			Input Capacitance (Ciss@Vds)	Kind of channel	Kind of package					Maximum Drain Source Resistance (MOhm)			厂商																			Polarisation		Power Dissipation (Pd)		Protection						Support	Total Gate Charge (Qg@Vgs)	Transport packaging size/quantity				Type of transistor	操作温度	包装	已出版	系列	JESD-609代码	无铅代码	零件状态	湿度敏感性等级(MSL)	终止次数	终端	ECCN 代码	Connector type	连接器类型	类型	电阻	端子表面处理	最高工作温度	最小工作温度	性别	附加功能	HTS代码	子类别	电压 - 额定直流	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	Supply voltage	深度	Reach合规守则	额定电流	频率	时间@峰值回流温度-最大值(s)	引脚数量	JESD-30代码	资历状况	螺纹距离	效率	Output voltage	极性	触点样式	配置	通道数量	元素配置	操作模式	Power dissipation	功率耗散	输出电流	箱体转运	接通延迟时间	场效应管类型	晶体管应用	Rds On(Max)@Id,Vgs	不同 Id 时 Vgs(th)（最大值）	输入电容(Ciss)(Max)@Vds	门极电荷(Qg)(最大)@Vgs	上升时间	漏源电压 (Vdss)	Vgs（最大值）	极性/通道类型	下降时间（典型值）	Operating temperature range	漏源击穿电压	最大耗散功率(Abs)	场效应管特性
IRF9540	Samsung	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	3	SILICON	5.07				TO-220AB	19 A											FLANGE MOUNT, R-PSFM-T3				FLANGE MOUNT			PLASTIC/EPOXY	未说明	175 °C	无		IRF9540					RECTANGULAR			Vishay Siliconix	1						Transferred		VISHAY SILICONIX						e0						EAR99					锡铅			雪崩额定					SINGLE	THROUGH-HOLE	未说明			compliant				3	R-PSFM-T3	不合格						SINGLE WITH BUILT-IN DIODE			增强型MOSFET								SWITCHING								P-CHANNEL						TO-220AB			0.2 Ω		72 A			100 V		640 mJ	METAL-OXIDE SEMICONDUCTOR
IRF9540	Fairchild Semiconductor	数据表	3550 In Stock	-	最小起订量: 1 最小包装量: 1	通孔	TO-220-3	TO-220AB	19A (Tc)	Fairchild Semiconductor			10V	150W (Tc)	活跃																						Bulk									-55°C ~ 175°C (TJ)			-																				MOSFET (Metal Oxide)																											P-Channel		200mOhm @ 11A, 10V	4V @ 250µA	1400 pF @ 25 V	61 nC @ 10 V		100 V	±20V																						-
IRF9540	Rochester Electronics LLC	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	3	SILICON	1	ROCHESTER ELECTRONICS LLC				19 A	PLASTIC/EPOXY	RECTANGULAR	FLANGE MOUNT																					活跃																								未说明									SINGLE	THROUGH-HOLE			unknown					R-PSFM-T3	COMMERCIAL						SINGLE WITH BUILT-IN DIODE			增强型MOSFET					DRAIN			SWITCHING								P-CHANNEL						TO-220AB			0.2 Ω		76 A			100 V		960 mJ	METAL-OXIDE SEMICONDUCTOR
IRF9540	Vishay Intertechnologies	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	3	SILICON	1	display - 2 lines of 16 characters (matrix 5 x 8 points), blue backlight	HD44780	31.95					无			Obsolete	VISHAY INTERTECHNOLOGY INC	19 A	175 °C	-55 °C		PLASTIC/EPOXY			RECTANGULAR		FLANGE MOUNT	Character LCD display 1602					not more than 2; backlight - 45 mA								does not support Cyrillic		403635/200									e0	无					EAR99					锡铅								SINGLE	THROUGH-HOLE		4.5…5 V	82 mm	unknown					R-PSFM-T3	不合格						SINGLE			增强型MOSFET					DRAIN			SWITCHING								P-CHANNEL		-20…+70 °C				TO-220AB			0.2 Ω		76 A			100 V			METAL-OXIDE SEMICONDUCTOR	150 W															LCD-1602 display with blue backlight (without Cyrillic support)		18 mm		35 mm
IRF9540	Vishay Precision Group	数据表	N/A	-	最小起订量: 1 最小包装量: 1	通孔	TO-220-3	TO-220AB	19A (Tc)				*IRF9540	10V	150W (Tc)																						Contains lead / RoHS non-compliant									-55°C ~ 175°C (TJ)	Tube		-				1 (Unlimited)											Male					MOSFET (Metal Oxide)																Pin											P-Channel		200 mOhm @ 11A, 10V	4V @ 250µA	1400pF @ 25V	61nC @ 10V		100V	±20V																						-
IRF9540	Vishay Siliconix	数据表	N/A	-	最小起订量: 1 最小包装量: 1	通孔	通孔	TO-220-3	3	TO-220AB	6.000006g	34 ns													19A Tc										10V							1		150W Tc		-55°C~175°C TJ	Tube	2011				Obsolete	1 (Unlimited)									175°C	-55°C					-100V							-19A												1	Single			150W				17 ns	P-Channel		200mOhm @ 11A, 10V	4V @ 250μA	1400pF @ 25V	61nC @ 10V	73ns	100V	±20V		57 ns			-19A			20V			-100V			1.4nF									200mOhm		200 mΩ		-4 V									9.01mm	10.41mm	4.7mm	无	Unknown	Non-RoHS Compliant	含铅
IRF9540	onsemi	数据表	N/A	-	最小起订量: 1 最小包装量: 1	200mΩ@11A,10V	100V	4V@250uA	1.4nF@25V																		150W		Bag-packed						true		61nC@10V						-55℃~+175℃@(Tj)													1 Piece P-Channel																																																	19A
IRF9540	Harris Semiconductor	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	3	SILICON	1	TP 4056	1.97						无			Transferred		HARRIS SEMICONDUCTOR	19 A	150 °C	PLASTIC/EPOXY		RECTANGULAR			FLANGE MOUNT		140 ns	120 ns					Li-ion Battery Charger for 18650 with USB Type C protection	from overcharge 4.2…4.28 V; overdischarge 3.0…3.2 V; by current - 3 A								422823.5/2000									e0						EAR99		USB C型			Tin/Lead (Sn/Pb)					8541.29.00.95			SINGLE	THROUGH-HOLE			25 mm	unknown					R-PSFM-T3	不合格						SINGLE WITH BUILT-IN DIODE			增强型MOSFET				(maximum charge current) 1 A	DRAIN			SWITCHING								P-CHANNEL						TO-220AB			0.2 Ω		76 A			100 V		960 mJ	METAL-OXIDE SEMICONDUCTOR	150 W									125 W	18650				4.35…6 V		Li-ion Battery Charger with Protection			16.5 mm
IRF9540	Intersil Corporation	数据表	N/A	-	最小起订量: 1 最小包装量: 1	NO	251 g	3	SILICON	1	216.67							无			Transferred			INTERSIL CORP	19 A	150 °C	PLASTIC/EPOXY		RECTANGULAR			FLANGE MOUNT		140 ns		120 ns				from reverse polarity at input - no; from short circuit	Boost DC-DC converter (10...60 / 12...80 V) with current regulator	at input - 12 (15) A						422823.5/30									e0						EAR99	screw type				Tin/Lead (Sn/Pb)					8541.29.00.95			SINGLE	THROUGH-HOLE			85 mm	not_compliant		conversion - 150 kHz			R-PSFM-T3	不合格		up to 95 %	12…80 (adjustable) V			SINGLE WITH BUILT-IN DIODE			增强型MOSFET			10 A max		DRAIN			SWITCHING								P-CHANNEL		-40…+85 °C				TO-220AB			0.2 Ω		76 A			100 V		960 mJ	METAL-OXIDE SEMICONDUCTOR	150 W		12 V - 120 W; 24 V - 240 W; 60 V - 600 W							125 W				10…60 V		Boost DC-DC with current regulator		64 mm		63 mm
IRF9540N	International Rectifier	数据表	148 In Stock	-	最小起订量: 1 最小包装量: 1	NO	3	SILICON	7.74				TO-220AB	23 A											TO-220AB, 3 PIN				FLANGE MOUNT			PLASTIC/EPOXY	30	175 °C	无		IRF9540N					RECTANGULAR			International Rectifier	1						Obsolete		INTERNATIONAL RECTIFIER CORP						e0	无					EAR99					Tin/Lead (Sn/Pb)			AVALANCHE RATED, HIGH RELIABILITY, FAST SWITCHING		其他晶体管			SINGLE	THROUGH-HOLE	225			unknown				3	R-PSFM-T3	不合格						SINGLE WITH BUILT-IN DIODE			增强型MOSFET					DRAIN			SWITCHING								P-CHANNEL						TO-220AB		19 A	0.117 Ω		76 A			100 V		430 mJ	METAL-OXIDE SEMICONDUCTOR	140 W									94 W
IRF9540N	Infineon	数据表	N/A	-	最小起订量: 1 最小包装量: 1																										有
IRF9540NL	Infineon Technologies	数据表	12888 In Stock	-	最小起订量: 1 最小包装量: 1	通孔	TO-262-3 Long Leads, I2Pak, TO-262AA	NO	SILICON	1	3.8W Ta 140W Tc															23A Tc										10V									-55°C~150°C TJ	Tube	2003	HEXFET®	e0		Obsolete	1 (Unlimited)	3		EAR99					Tin/Lead (Sn/Pb)				AVALANCHE RATED, HIGH RELIABILITY	8541.29.00.95				SINGLE		225					30		R-PSIP-T3	不合格						SINGLE WITH BUILT-IN DIODE			增强型MOSFET					DRAIN		P-Channel	SWITCHING	117m Ω @ 11A, 10V	4V @ 250μA	1300pF @ 25V	97nC @ 10V		100V	±20V									23A	0.117Ohm		76A			100V		430 mJ																								Non-RoHS Compliant
IRF9540 PBF	ON Semiconductor	数据表	N/A	-	最小起订量: 1 最小包装量: 1
IRF9540PBF	International Rectifier	数据表	24 In Stock	-	最小起订量: 1 最小包装量: 1
IRF9540PBF	Vishay Intertechnologies	数据表	23750 In Stock	1: ¥3.230978 10: ¥3.048094 100: ¥2.875564 500: ¥2.712792 查看所有的价格 -	最小起订量: 1 最小包装量: 1	17 Weeks, 3 Days	NO	3	SILICON	1			RECTANGULAR					FLANGE MOUNT		PLASTIC/EPOXY	-55 °C	175 °C	19 A		TO-220AB			VISHAY INTERTECHNOLOGY INC		活跃	有																								e3	有					EAR99					哑光锡				雪崩额定				SINGLE	THROUGH-HOLE	260			not_compliant			30	3	R-PSFM-T3	不合格						SINGLE WITH BUILT-IN DIODE			增强型MOSFET								SWITCHING								P-CHANNEL						TO-220AB			0.2 Ω		72 A			100 V		640 mJ	METAL-OXIDE SEMICONDUCTOR	150 W								140 pF
IRF9540NHR	International Rectifier	数据表	N/A	-	最小起订量: 1 最小包装量: 1	通孔	3			1																							51 ns								Non-Compliant																			175 °C	-55 °C																												140 W				15 ns							67 ns							23 A			20 V																															无
IRF9540NSHR	International Rectifier	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	YES	2	SILICON			Enhancement		1	Not Required MHz			无	表面贴装	Non-Compliant				51 ns	SMALL OUTLINE, R-PSSO-G2	小概要	1		PLASTIC/EPOXY	30		无	IRF9540NSHR	RECTANGULAR	International Rectifier	Obsolete	INTERNATIONAL RECTIFIER CORP	5.91	23 A									23(A)						100(V)				Military	D2PAK	-55C to 175C				±20(V)		Not Required W			卷带			e0	无				EAR99			功率MOSFET		锡铅	175 °C	-55 °C		AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	8541.29.00.95				SINGLE	鸥翼	225			compliant				2 +Tab	R-PSSO-G2					P		SINGLE WITH BUILT-IN DIODE			增强型MOSFET		3.8(W)			DRAIN	15 ns		SWITCHING					67 ns	100 V		P-CHANNEL				23 A			20 V	0.117 Ω		76 A			100 V		430 mJ	METAL-OXIDE SEMICONDUCTOR					117 MΩ	Not Required dB	Not Required dB	无	含铅
IRF9540SPBF	International Rectifier	数据表	N/A	-	最小起订量: 1 最小包装量: 1
IRF9540NSHR	Infineon	数据表	N/A	-	最小起订量: 1 最小包装量: 1				117@10V				8541.29.00.95				无		无	Enhancement	1	100		3100																														Obsolete																																		Single																																		P
IRF9540NPBF	Infineon Technologies	数据表	2713 In Stock	-	最小起订量: 1 最小包装量: 1	12 Weeks	Tin	通孔	通孔	TO-220-3	3	SILICON										23A Tc										10V					1	140W Tc					51 ns			-55°C~150°C TJ	Tube	1998	HEXFET®	e3		活跃	1 (Unlimited)	3	通孔	EAR99				117mOhm					AVALANCHE RATED, HIGH RELIABILITY			-100V				250			-23A		30				2.54mm							Single	增强型MOSFET		140W			DRAIN	15 ns	P-Channel	SWITCHING	117m Ω @ 11A, 10V	4V @ 250μA	1300pF @ 25V	97nC @ 10V	67ns	100V	±20V		51 ns			-23A	-4V	TO-220AB	20V			-100V	76A	-100V							220 ns							-4 V									15.24mm	10.5156mm	4.69mm	无	无SVHC	ROHS3 Compliant	无铅
IRF9540SPBF	VISHAY	数据表	134 In Stock	1: ¥7.313554 10: ¥6.899580 100: ¥6.509038 500: ¥6.140602 查看所有的价格 -	最小起订量: 1 最小包装量: 1	D2PAK	TO263	RoHS compliant	-13A	-100V	±20V	1.48g	enhanced	tube					SMD					unipolar																	P-MOSFET																																													150W																																								61nC					0.2Ω
IRF9540NLPBF	Infineon Technologies	数据表	4 In Stock	-	最小起订量: 1 最小包装量: 1	12 Weeks	通孔	通孔	TO-262-3 Long Leads, I2Pak, TO-262AA	3	SILICON	40 ns													23A Tc										10V							1		3.1W Ta 110W Tc		-55°C~150°C TJ	Tube	2005	HEXFET®	e3		活跃	1 (Unlimited)	3	通孔	EAR99				117mOhm	Matte Tin (Sn) - with Nickel (Ni) barrier				AVALANCHE RATED, HIGH RELIABILITY							260					30										1	Single	增强型MOSFET		3.1W			DRAIN	13 ns	P-Channel	SWITCHING	117m Ω @ 14A, 10V	4V @ 250μA	1450pF @ 25V	110nC @ 10V	67ns		±20V		51 ns			-23A	4V		20V			-100V	92A	100V				84 mJ										4 V									9.65mm	10.668mm	4.826mm	无	无SVHC	ROHS3 Compliant	无铅
IRF9540NSTRR	Infineon Technologies	数据表	493 In Stock	-	最小起订量: 1 最小包装量: 1	表面贴装	表面贴装	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	SILICON	1	3.8W Ta 140W Tc															23A Tc										10V									-55°C~150°C TJ	Tape & Reel (TR)	2003	HEXFET®	e3		Obsolete	1 (Unlimited)	2		EAR99					Matte Tin (Sn) - with Nickel (Ni) barrier				AVALANCHE RATED, HIGH RELIABILITY			-100V		SINGLE	鸥翼	260			-23A		30		R-PSSO-G2	不合格						SINGLE WITH BUILT-IN DIODE			增强型MOSFET					DRAIN		P-Channel	SWITCHING	117m Ω @ 11A, 10V	4V @ 250μA	1300pF @ 25V	97nC @ 10V	67ns	100V	±20V					23A					0.117Ohm		92A					84 mJ																								Non-RoHS Compliant	含铅
IRF9540NSPBF	Infineon Technologies	数据表	23 In Stock	-	最小起订量: 1 最小包装量: 1	表面贴装	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	YES	SILICON	1	3.1W Ta 110W Tc															23A Tc										10V									-55°C~150°C TJ	Tube	2003	HEXFET®	e3		Discontinued	1 (Unlimited)	2		EAR99					Matte Tin (Sn) - with Nickel (Ni) barrier				AVALANCHE RATED, HIGH RELIABILITY					SINGLE	鸥翼	260					30		R-PSSO-G2	不合格						SINGLE WITH BUILT-IN DIODE			增强型MOSFET					DRAIN		P-Channel	SWITCHING	117m Ω @ 14A, 10V	4V @ 250μA	1450pF @ 25V	110nC @ 10V		100V	±20V									23A	0.117Ohm		92A			100V		84 mJ																								ROHS3 Compliant
IRF9540NPBF-VB	VBsemi Elec	数据表	N/A	-	最小起订量: 1 最小包装量: 1	167mΩ@10V,18A	100V																									true								Tube-packed																1 Piece P-Channel																																																	18A