GeneSiC Semiconductor G2R1000MT17J

包装/外壳

QFN

安装类型

表面贴装

供应商器件包装

TO-263-7

Standard Frequency

125

Product Depth (mm)

5(mm)

Operating Temp Range

-40C to 85C

Mounting Styles

表面贴装

Operating Supply Voltage (Max)

3.63(V)

Operating Supply Voltage (Min)

2.97(V)

Programmable

无

Continuous Drain Current Id

4A

Vds - Drain-Source Breakdown Voltage

1.7 kV

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

44 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Forward Transconductance - Min

0.76 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

11 nC

Rds On - Drain-Source Resistance

1 Ohms

RoHS

Details

Typical Turn-Off Delay Time

13 ns

Id - Continuous Drain Current

5 A

Package

Tube

Base Product Number

G2R1000

Current - Continuous Drain (Id) @ 25℃

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

54W (Tc)

Product Status

活跃

Usage Level

Industrial grade

包装

Bulk

系列

G2R

操作温度

-55°C ~ 175°C (TJ)

类型

CLOCK OSCILLATOR

子类别

MOSFETs

技术

SiC

频率稳定性

±25(ppm)

引脚数量

6

对称性-最大值

55(%)

配置

Single

通道数量

1 Channel

功率耗散

54W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2Ohm @ 2A, 20V

不同 Id 时 Vgs(th)（最大值）

4V @ 2mA

输入电容(Ciss)(Max)@Vds

139 pF @ 1000 V

上升时间

19 ns

漏源电压 (Vdss)

1700 V

Vgs（最大值）

+20V, -10V

产品类别

MOSFET

晶体管类型

MOSFET

筛选水平

Industrial

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET

产品长度(mm)

7(mm)

产品高度(mm)

0.9(mm)