GeneSiC Semiconductor G2R1000MT33J

包装/外壳

QFN

安装类型

表面贴装

供应商器件包装

TO-263-7

Standard Frequency

148.35

Operating Temp Range

-20C to 70C

Operating Supply Voltage (Max)

3.63(V)

Operating Supply Voltage (Min)

2.97(V)

Programmable

无

Continuous Drain Current Id

4A

Package

Tube

Base Product Number

G2R1000

Current - Continuous Drain (Id) @ 25℃

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

74W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

3.3 kV

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

74 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

18 nC

Rds On - Drain-Source Resistance

1 Ohms

Id - Continuous Drain Current

5 A

包装

Bulk

操作温度

-55°C ~ 175°C (TJ)

系列

G2R™

类型

CLOCK OSCILLATOR

技术

SiCFET (Silicon Carbide)

频率稳定性

±25(ppm)

对称性-最大值

55(%)

通道数量

1 Channel

负载电容

15(pF)

功率耗散

74W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2Ohm @ 2A, 20V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 2mA

输入电容(Ciss)(Max)@Vds

238 pF @ 1000 V

门极电荷(Qg)(最大)@Vgs

21 nC @ 20 V

漏源电压 (Vdss)

3300 V

Vgs（最大值）

+20V, -5V

信道型

N通道

场效应管特性

-