GeneSiC Semiconductor G3F60MT06D
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G3F60MT06D
962-G3F60MT06D
晶体管 - FET,MOSFET - 单个
TO-247-3
大陆
立即发货

SiC MOSFETs 650V 55mohm TO-247-3 G3F SiC MOSFET
1最小包装量--
G3F60MT06D详情
GeneSiC Semiconductor G3F60MT06D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
RoHS
符合RoHS标准
Mounting Styles
通孔
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - Continuous Drain Current
42 A
Rds On - Drain-Source Resistance
55 mOhms
Channel Mode
Enhancement
Factory Pack Quantity
30
包装
Tube
系列
G3F
配置
Single
通道数量
1 Channel
G3F60MT06D拓展信息
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor








哦! 它是空的。