GeneSiC Semiconductor G3R20MT17K

包装/外壳

TO-247-4

安装类型

通孔

供应商器件包装

TO-247-4

Continuous Drain Current Id

124A

Vds - Drain-Source Breakdown Voltage

1.7 kV

Typical Turn-On Delay Time

104 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

569 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Forward Transconductance - Min

38.6 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

256 nC

Rds On - Drain-Source Resistance

20 mOhms

RoHS

Details

Typical Turn-Off Delay Time

134 ns

Id - Continuous Drain Current

101 A

Package

Tube

Base Product Number

G3R20

Current - Continuous Drain (Id) @ 25℃

124A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

809W (Tc)

Product Status

活跃

系列

G3R

包装

Tube

操作温度

-55°C ~ 175°C (TJ)

类型

SiC MOSFET

子类别

MOSFETs

技术

SiC

配置

Single

通道数量

1 Channel

功率耗散

809W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

26mOhm @ 75A, 15V

不同 Id 时 Vgs(th)（最大值）

2.7V @ 15mA

输入电容(Ciss)(Max)@Vds

10187 pF @ 1000 V

门极电荷(Qg)(最大)@Vgs

400 nC @ 15 V

上升时间

129 ns

漏源电压 (Vdss)

1700 V

Vgs（最大值）

±15V

产品类别

MOSFET

晶体管类型

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET