GeneSiC Semiconductor G3R40MT12K

包装/外壳

QFN

安装类型

通孔

供应商器件包装

TO-247-4

Standard Frequency

200

Operating Temp Range

-40C to 85C

Operating Supply Voltage (Max)

1.89(V)

Operating Supply Voltage (Min)

1.71(V)

Programmable

无

Continuous Drain Current Id

71A

Package

Tube

Base Product Number

G3R40

Current - Continuous Drain (Id) @ 25℃

71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

333W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

228 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

88 nC

Rds On - Drain-Source Resistance

40 mOhms

Id - Continuous Drain Current

55 A

包装

Bulk

操作温度

-55°C ~ 175°C (TJ)

系列

G3R™

类型

CLOCK OSCILLATOR

技术

SiCFET (Silicon Carbide)

频率稳定性

±10(ppm)

对称性-最大值

60(%)

通道数量

1 Channel

负载电容

15(pF)

功率耗散

333W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

48mOhm @ 35A, 15V

不同 Id 时 Vgs(th)（最大值）

2.69V @ 10mA

输入电容(Ciss)(Max)@Vds

2929 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

106 nC @ 15 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±15V

信道型

N通道

场效应管特性

-