GeneSiC Semiconductor MSRTA200100D
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MSRTA200100D
962-MSRTA200100D
二极管 - 整流器 - 阵列
Axial
大陆
立即发货

1000V 200A THREE TOWER ISO SILIC
1最小包装量--
MSRTA200100D详情
GeneSiC Semiconductor MSRTA200100D重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
包装/外壳
Axial
安装类型
底座安装
供应商器件包装
Axial
Package
Tape & Reel (TR)
Base Product Number
RNR55
厂商
Vishay Dale
Product Status
活跃
Current - Average Rectified (Io) (per Diode)
200A
Vr - Reverse Voltage
1000 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
24
Mounting Styles
SMD/SMT
Manufacturer
GeneSiC Semiconductor
Brand
GeneSiC Semiconductor
If - Forward Current
200 A
RoHS
Details
Ifsm - Forward Surge Current
3000 A
操作温度
-65°C ~ 175°C
系列
Military, MIL-PRF-55182/01, RNR55
包装
Bulk
尺寸/尺寸
0.094 Dia x 0.250 L (2.39mm x 6.35mm)
容差
±1%
终止次数
2
温度系数
±50ppm/°C
类型
Standard Recovery Rectifier Module
电阻
10 kOhms
组成
Metal Film
功率(瓦特)
0.125W, 1/8W
子类别
Discrete Semiconductor Modules
技术
Standard
失败率
R (0.01%)
速度
Standard Recovery >500ns, > 200mA (Io)
反向泄漏电流@ Vr
10 µA @ 1000 V
不同 If 时电压 - 正向 (Vf)
1.1 V @ 200 A
工作温度 - 结点
-55°C ~ 150°C
电压 - 直流逆向(Vr)(最大值)
1000 V
产品类别
Discrete Semiconductor Modules
二极管配置
1 Pair Series Connection
产品
Rectifier Modules
特征
Military, Moisture Resistant
产品类别
Discrete Semiconductor Modules
座位高度(最大)
-
MSRTA200100D拓展信息
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor







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