GOFORD G50N03J

安装类型

通孔

包装/外壳

TO-251-3 Stub Leads, IPak

供应商器件包装

TO-251

Package

Tube

Current - Continuous Drain (Id) @ 25℃

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Goford Semiconductor

Power Dissipation (Max)

48W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

1255 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

16.6 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

场效应管特性

-