GOFORD GT080N10TI

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

Manufacturer Part Number

16DA1C4

Approvals

UL

Manufacturer

Warrick a Brand of Gems Sensor

Package

Tube

Current - Continuous Drain (Id) @ 25℃

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Goford Semiconductor

Power Dissipation (Max)

100W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

输出配置

单刀双掷

输出电流

10 A

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

2328 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

35 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-

控制电压

120 VAC