Harris Corporation HRF3205L

安装类型

通孔

包装/外壳

TO-262-3 Long Leads, I2Pak, TO-262AA

表面安装

NO

供应商器件包装

I2PAK (TO-262)

终端数量

3

晶体管元件材料

SILICON

厂商

Harris Corporation

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

Power Dissipation (Max)

175W (Tc)

Package Style

IN-LINE

Package Body Material

PLASTIC/EPOXY

Manufacturer Part Number

HRF3205L

Package Shape

RECTANGULAR

Manufacturer

Rochester Electronics LLC

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Risk Rank

5.3

Drain Current-Max (ID)

100 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

端子位置

SINGLE

终端形式

THROUGH-HOLE

JESD-30代码

R-PSIP-T3

资历状况

COMMERCIAL

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

8mOhm @ 59A, 10V

输入电容(Ciss)(Max)@Vds

4000 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

170 nC @ 10 V

漏源电压 (Vdss)

55 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-262AA

漏极-源极导通最大电阻

0.008 Ω

脉冲漏极电流-最大值(IDM)

390 A

DS 击穿电压-最小值

55 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

达到SVHC

unknown