Harris Semiconductor HGTG5N120BND
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HGTG5N120BND
1050-HGTG5N120BND
晶体管 - IGBT - 单个
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大陆
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Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-247
1最小包装量--
HGTG5N120BND详情
Harris Semiconductor HGTG5N120BND重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Part Life Cycle Code
Transferred
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Nom (toff)
182 ns
Turn-on Time-Nom (ton)
20 ns
ECCN 代码
EAR99
附加功能
LOW CONDUCTION LOSS, HYPER FAST RECOVERY
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
箱体转运
COLLECTOR
晶体管应用
MOTOR CONTROL
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-247
集电极电流-最大值(IC)
21 A
集电极-发射器电压-最大值
1200 V
HGTG5N120BND拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation







哦! 它是空的。