Harris Semiconductor HGTP15N120C3
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HGTP15N120C3
1050-HGTP15N120C3
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
1最小包装量--
HGTP15N120C3详情
Harris Semiconductor HGTP15N120C3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Package Description
FLANGE MOUNT, R-PSFM-T3
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Nom (toff)
820 ns
Turn-on Time-Nom (ton)
42 ns
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn/Pb)
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE
箱体转运
COLLECTOR
晶体管应用
MOTOR CONTROL
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-220AB
最大耗散功率(Abs)
164 W
集电极电流-最大值(IC)
35 A
集电极-发射器电压-最大值
1200 V
栅极-发射极电压-最大值
20 V
栅极-发射极Thr电压-最大值
7.5 V
最大下降时间 (tf)
400 ns
HGTP15N120C3拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
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