HARTING 9554557621741

包装/外壳

PowerPAK-SO-8

Vds - Drain-Source Breakdown Voltage

200 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

1.9 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.017870 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

19 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

65 mOhms

RoHS

Details

Typical Turn-Off Delay Time

32 ns

Id - Continuous Drain Current

3.2 A

Shell Sizes

4 (C)

Filtered

Unfiltered

系列

SI7

包装

Reel

类型

Receptacle

定位的数量

37 Position

行数

2 Row

性别

Female

子类别

MOSFETs

技术

Si

终端样式

SMD/SMT

触点性别

Socket (Female)

配置

Single

通道数量

1 Channel

上升时间

20 ns

产品类别

MOSFET

安装角

Straight

产品类别

MOSFET