Infineon 2N7002H6327XT

包装/外壳

SOT-23-3

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

3 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Qualification

AEC-Q101

Pd - Power Dissipation

500 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

24000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

200 mS

Channel Mode

Enhancement

Part # Aliases

2N7002 SP000929182 H6327 2N7002H6327XTSA2

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

600 pC

Rds On - Drain-Source Resistance

1.6 Ohms

RoHS

Details

Typical Turn-Off Delay Time

5.5 ns

Id - Continuous Drain Current

300 mA

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

3.3 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

1.3 mm

高度

1.1 mm

长度

2.9 mm