Infineon BC817K40E6327XT

工厂交货时间

4 Weeks

包装/外壳

SOT-23-3

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Qualification

AEC-Q101

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

500 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

250 at 100mA, 1 V

Collector-Emitter Saturation Voltage

700 mV

Unit Weight

0.000282 oz

Factory Pack QuantityFactory Pack Quantity

42000

Mounting Styles

SMD/SMT

Collector- Emitter Voltage VCEO Max

45 V

DC Current Gain hFE Max

630 at 100 mA, 1 V

Maximum DC Collector Current

1 A

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

SP000271895 BC 817K-40 E6327 BC817K40E6327HTSA1

Gain Bandwidth Product fT

170 MHz

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Transition Frequency-Nom (fT)

170 MHz

Manufacturer Part Number

BC817K40E6327XT

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

生命周期结束

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.76

包装

Reel

子类别

Transistors

技术

Si

端子位置

DUAL

终端形式

鸥翼

Reach合规守则

compliant

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G3

配置

Single

晶体管应用

AMPLIFIER

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

50 V

集电极电流-最大值(IC)

0.5 A

最小直流增益（hFE）

250

连续集电极电流

500 mA

集电极-发射器电压-最大值

45 V

产品类别

Bipolar Transistors - BJT