BDP948H6327详情
Infineon BDP948H6327重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
表面贴装
包装/外壳
SOT-223-4
Collector-Emitter Breakdown Voltage
45 V
RoHS
Compliant
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
5 W
Transistor Polarity
PNP
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
500 mV
Unit Weight
0.003785 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
100 MHz
Part # Aliases
SP000748378 BDP948H6327XTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Maximum DC Collector Current
3 A
Collector- Emitter Voltage VCEO Max
45 V
包装
MouseReel
子类别
Transistors
最大功率耗散
5 W
技术
Si
极性
PNP
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极发射器电压(VCEO)
500 mV
最大集电极电流
3 A
转换频率
100 MHz
集电极基极电压(VCBO)
45 V
连续集电极电流
3 A
产品类别
Bipolar Transistors - BJT
BDP948H6327拓展信息
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