Infineon BDP949H6327

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

5 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

Collector-Emitter Saturation Voltage

500 mV

Unit Weight

0.003785 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Part # Aliases

SP000748382 BDP949H6327XT BDP949H6327XTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Maximum DC Collector Current

3 A

RoHS

Details

Collector- Emitter Voltage VCEO Max

60 V

包装

切割胶带

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

60 V

产品类别

Bipolar Transistors - BJT