Infineon BSC016N03LSGXT

包装/外壳

TDSON-8

底架

表面贴装

引脚数

8

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

65 S

Channel Mode

Enhancement

Part # Aliases

BSC016N03LS G SP000237663 BSC016N03LSGATMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

131 nC

Rds On - Drain-Source Resistance

1.3 mOhms

Typical Turn-Off Delay Time

51 ns

Id - Continuous Drain Current

100 A

RoHS

Compliant

Turn Off Delay Time

51 ns

包装

Reel

最高工作温度

150 °C

最小工作温度

-55 °C

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

接通延迟时间

13 ns

上升时间

8.6 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

连续放电电流(ID)

100 A

栅极至源极电压(Vgs)

20 V

产品类别

MOSFET

宽度

5.15 mm

高度

1.27 mm

长度

5.9 mm

辐射硬化

无