Infineon BSC026N02KS G

包装/外壳

TDSON-8

安装类型

表面贴装

表面安装

YES

引脚数

8

供应商器件包装

PG-TDSON-8-1

终端数量

5

晶体管元件材料

SILICON

Continuous Drain Current Id

25

Vds - Drain-Source Breakdown Voltage

20 V

Moisture Sensitive

有

Typical Turn-On Delay Time

21 ns

Vgs th - Gate-Source Threshold Voltage

700 mV

Pd - Power Dissipation

78 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.004287 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

95 S

Channel Mode

Enhancement

Part # Aliases

BSC26N2KSGXT SP000379664 BSC026N02KSGAUMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

52.7 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

2.1 mOhms

RoHS

Details

Typical Turn-Off Delay Time

52 ns

Id - Continuous Drain Current

100 A

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

25A (Ta), 134A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

厂商

Infineon Technologies

Power Dissipation (Max)

2.8W (Ta), 78W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.2V @ 200µA

Rohs Code

有

Manufacturer Part Number

BSC026N02KSG

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Package Description

GREEN, PLASTIC, MO-240, TDSON-8

Package Style

小概要

Moisture Sensitivity Levels

3

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

40

Operating Temperature-Max

150 °C

Risk Rank

5.67

Part Package Code

SON

Drain Current-Max (ID)

25 A

系列

OptiMOS 2

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

JESD-609代码

e3

无铅代码

有

ECCN 代码

EAR99

端子表面处理

哑光锡

附加功能

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

子类别

MOSFETs

技术

Si

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

260

JESD-30代码

R-PDSO-F5

资历状况

不合格

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

2.6mOhm @ 50A, 4.5V

输入电容(Ciss)(Max)@Vds

7800 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

52.7 nC @ 4.5 V

上升时间

115 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

最大漏极电流 (Abs) (ID)

100 A

漏极-源极导通最大电阻

0.0045 Ω

脉冲漏极电流-最大值(IDM)

200 A

DS 击穿电压-最小值

20 V

信道型

N

雪崩能量等级（Eas）

550 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

78 W

场效应管特性

-

产品类别

MOSFET

宽度

5.15 mm

高度

1.27 mm

长度

5.9 mm

达到SVHC

compliant