Infineon BSS169H6327XT

包装/外壳

SOT-23-3

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

2.9 ns

Vgs th - Gate-Source Threshold Voltage

2.9 V

Qualification

AEC-Q101

Pd - Power Dissipation

360 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.001199 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

6000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

0.2 S

Channel Mode

Depletion

Part # Aliases

H6327 BSS169 SP000702572 BSS169H6327XTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

2.1 nC

Rds On - Drain-Source Resistance

2.9 Ohms

RoHS

Details

Typical Turn-Off Delay Time

11 ns

Id - Continuous Drain Current

170 mA

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Drain Current-Max (ID)

0.17 A

Risk Rank

1.76

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Part Life Cycle Code

活跃

Number of Elements

1

Package Shape

RECTANGULAR

Manufacturer Part Number

BSS169H6327XT

系列

BSS169

包装

MouseReel

类型

SIPMOS Small Signal Transistor

子类别

MOSFETs

技术

Si

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G3

配置

Single

通道数量

1 Channel

操作模式

DEPLETION MODE

上升时间

2.7 ns

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

漏极-源极导通最大电阻

12 Ω

DS 击穿电压-最小值

100 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

反馈上限-最大值 (Crss)

7 pF

产品

MOSFET小信号

产品类别

MOSFET

宽度

1.3 mm

高度

1.1 mm

长度

2.9 mm

达到SVHC

compliant