FS50R07U1E4详情
Infineon FS50R07U1E4重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SmartPACK1
Maximum Gate Emitter Voltage
20 V
Pd - Power Dissipation
230 W
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
1.55 V
Unit Weight
1.199315 oz
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
30
Continuous Collector Current at 25 C
75 A
Mounting Styles
底座安装
Part # Aliases
SP000939168 FS50R07U1E4BPSA1
Manufacturer
Infineon
Brand
Infineon Technologies
RoHS
Details
Collector- Emitter Voltage VCEO Max
650 V
Package Description
,
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Manufacturer Part Number
FS50R07U1E4
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
8.42
包装
Tray
无铅代码
无
子类别
IGBTs
技术
Si
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
配置
6-Pack
产品类别
IGBT模块
产品
IGBT硅模块
产品类别
IGBT模块
FS50R07U1E4拓展信息
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon








哦! 它是空的。