Infineon IPB015N06NF2SATMA1

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

安装类型

表面贴装

供应商器件包装

PG-TO263-3

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.3V @ 186µA

Product Status

活跃

Power Dissipation (Max)

3.8W (Ta), 250W (Tc)

厂商

Infineon Technologies

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Current - Continuous Drain (Id) @ 25℃

37A (Ta), 195A (Tc)

Base Product Number

IPB015

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

155 nC

Rds On - Drain-Source Resistance

1.5 mOhms

Id - Continuous Drain Current

195 A

系列

StrongIRFET™2

操作温度

-55°C ~ 175°C (TJ)

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.5mOhm @ 100A, 10V

输入电容(Ciss)(Max)@Vds

10500 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

233 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

场效应管特性

-