Infineon IPB043N10NF2SATMA1

安装类型

表面贴装

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3

Package

Tube

Current - Continuous Drain (Id) @ 25℃

21A (Ta), 135A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 93µA

Factory Pack QuantityFactory Pack Quantity

800

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

167 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

57 nC

Rds On - Drain-Source Resistance

4.35 mOhms

Id - Continuous Drain Current

135 A

操作温度

-55°C ~ 175°C (TJ)

系列

StrongIRFET™ 2

包装

切割胶带

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.35mOhm @ 80A, 10V

输入电容(Ciss)(Max)@Vds

4000 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

85 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-

产品类别

Infineon