Infineon IPB50N10S3L16ATMA2

安装类型

表面贴装

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3-2

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

100W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.4V @ 60µA

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101, OptiMOS®-T

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

15.7mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

4180 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

64 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-