Infineon IPD055N08NF2SATMA1

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

PG-TO252-3

Package

Tube

Current - Continuous Drain (Id) @ 25℃

17A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

3W (Ta), 107W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 55µA

Factory Pack QuantityFactory Pack Quantity

2000

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

107 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

36 nC

Rds On - Drain-Source Resistance

5.5 mOhms

Id - Continuous Drain Current

98 A

操作温度

-55°C ~ 175°C (TJ)

系列

StrongIRFET™ 2

包装

切割胶带

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.5mOhm @ 60A, 10V

输入电容(Ciss)(Max)@Vds

2500 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

54 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

场效应管特性

-

产品类别

Infineon