Infineon IPD90P03P4-04

包装/外壳

TO-252-3

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

35 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Qualification

AEC-Q101

Pd - Power Dissipation

137 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

SP000396298 IPD9P3P44XT IPD90P03P404ATMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

100 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

4.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

70 ns

Id - Continuous Drain Current

90 A

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

IPD90P03P4-04

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Samacsys Description

MOSFET P-Channel 30V 90A TO252-3 Infineon IPD90P03P4-04 P-channel MOSFET Transistor, 90 A, 30 V, 3-Pin TO-252

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

2.19

Part Package Code

TO-252

Drain Current-Max (ID)

90 A

系列

OptiMOS-P2

包装

MouseReel

JESD-609代码

e3

无铅代码

有

ECCN 代码

EAR99

端子表面处理

Tin (Sn)

子类别

MOSFETs

技术

Si

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

4

JESD-30代码

R-PSSO-G2

资历状况

不合格

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

上升时间

10 ns

极性/通道类型

P-CHANNEL

产品类别

MOSFET

晶体管类型

1 P-Channel

JEDEC-95代码

TO-252

最大漏极电流 (Abs) (ID)

90 A

漏极-源极导通最大电阻

0.0045 Ω

脉冲漏极电流-最大值(IDM)

360 A

DS 击穿电压-最小值

30 V

雪崩能量等级（Eas）

370 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

137 W

产品类别

MOSFET

宽度

6.22 mm

高度

2.3 mm

长度

6.5 mm