Infineon IPP50R500CE

安装类型

-

包装/外壳

TO-220-3

表面安装

NO

材料

-

终端数量

3

晶体管元件材料

SILICON

Package

Box

Base Product Number

ALBCBS393

厂商

Amphenol Air LB

Product Status

活跃

For Use With/Related Products

-

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

57 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000939326 IPP5R5CEXK IPP50R500CEXKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

18.7 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

500 mOhms

RoHS

Details

Id - Continuous Drain Current

7.6 A

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IPP50R500CE

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Obsolete

Samacsys Description

Infineon IPP50R500CE N-channel MOSFET Transistor, 7.6 A, 550 V, 3-Pin TO-220

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

8.6

Part Package Code

TO-220AB

系列

-

包装

Tube

尺寸/尺寸

-

无铅代码

有

类型

-

颜色

-

子类别

MOSFETs

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PSFM-T3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

JEDEC-95代码

TO-220AB

漏极-源极导通最大电阻

0.5 Ω

脉冲漏极电流-最大值(IDM)

24 A

DS 击穿电压-最小值

500 V

雪崩能量等级（Eas）

129 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

产品类别

MOSFET

宽度

4.4 mm

高度

15.65 mm

长度

10 mm