Infineon IPP60R520C6

包装/外壳

TO-220-3

安装类型

通孔

供应商器件包装

PG-TO220-3-1

Continuous Drain Current Id

8.1

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

66 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000645068 IPP6R52C6XK IPP60R520C6XKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

23.4 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

470 mOhms

RoHS

Details

Typical Turn-Off Delay Time

85 ns

Id - Continuous Drain Current

8.1 A

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

8.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

29W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 230µA

系列

CoolMOS C6

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

功率耗散

66

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

520mOhm @ 2.8A, 10V

输入电容(Ciss)(Max)@Vds

512 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

23.4 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET

宽度

4.4 mm

高度

15.65 mm

长度

10 mm