Infineon IPT013N08NM5LF

安装类型

表面贴装

包装/外壳

8-PowerSFN

供应商器件包装

PG-HSOF-8

厂商

Infineon Technologies

Power Dissipation (Max)

3.1W (Ta), 278W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.1V @ 250µA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

IPT013N

Current - Continuous Drain (Id) @ 25℃

35A (Ta), 333A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

操作温度

-55°C ~ 150°C (TJ)

系列

OptiMOS™ 5

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.3mOhm @ 150A, 10V

输入电容(Ciss)(Max)@Vds

820 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

158 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

场效应管特性

-