Infineon IPW65R190E6

包装/外壳

TO-247-3

安装类型

通孔

引脚数

3 +Tab

供应商器件包装

PG-TO247-3-41

Continuous Drain Current Id

20.2

Mounting

通孔

Rad Hardened

无

Number of Elements

1

Channel Mode

Enhancement

Gate-Source Voltage (Max)

20(V)

Operating Temp Range

-55C to 150C

Package Type

TO-247

Operating Temperature Classification

Military

Drain-Source On-Volt

700(V)

Continuous Drain Current

20.2(A)

Id - Continuous Drain Current

20.2 A

Typical Turn-Off Delay Time

133 nS

RoHS

Details

Rds On - Drain-Source Resistance

190 mOhms

Tradename

CoolMOS

Qg - Gate Charge

73 nC

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

IPW65R19E6XK SP000863906 IPW65R190E6FKSA1

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

240

Minimum Operating Temperature

- 55 C

Unit Weight

0.211644 oz

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

151 W

Vgs th - Gate-Source Threshold Voltage

3.5 V

Vds - Drain-Source Breakdown Voltage

650 V

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

151W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 730µA

包装

Rail/Tube

系列

CoolMOS E6

操作温度

-55°C ~ 150°C (TJ)

类型

功率MOSFET

子类别

MOSFETs

技术

Si

极性

N

配置

Single

通道数量

1 Channel

功率耗散

151

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

190mOhm @ 7.3A, 10V

输入电容(Ciss)(Max)@Vds

1620 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

73 nC @ 10 V

上升时间

12 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET

长度

16.13 mm

高度

21.1 mm

宽度

5.21 mm