IR21367JTR详情
Infineon IR21367JTR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
不合规
ECCN (US)
EAR99
Automotive
无
PPAP
无
Driver Type
高低侧
Driver Configuration
Inverting
Bridge Type
3-Phase Bridge
High and Low Sides Dependency
Independent
Maximum Rise Time (ns)
190
Maximum Fall Time (ns)
75
Input Logic Compatibility
CMOS|LSTTL|3.3V(Min)
Minimum Operating Supply Voltage (V)
12
Maximum Operating Supply Voltage (V)
20
Typical Input Low Threshold Voltage (V)
10.9
Typical Input High Threshold Voltage (V)
11.1
Reference Voltage (V)
600(Max)
Maximum Power Dissipation (mW)
2000
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Special Features
Current Sensing|Undervoltage Lockout
Maximum Turn-On Delay Time (ns)
250(Typ)
Maximum Turn-Off Delay Time (ns)
180(Typ)
Mounting
表面贴装
Package Height
3.69(Min)
Package Width
16.66(Max)
Package Length
16.66(Max)
PCB changed
32
Standard Package Name
LCC
Supplier Package
PLCC
Lead Shape
J-Lead
包装
卷带
零件状态
Obsolete
类型
IGBT|MOSFET
引脚数量
32
输出的数量
6
驱动器数量
6
IR21367JTR拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。