SMBT2907AE6327XT详情
Infineon SMBT2907AE6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
Qualification
AEC-Q101
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
330 mW
Transistor Polarity
PNP
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
1.6 V
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
45000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
200 MHz
Part # Aliases
SMBT 2907A E6327 SP000011181 SMBT2907AE6327HTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
RoHS
Details
Collector- Emitter Voltage VCEO Max
60 V
包装
Reel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
60 V
连续集电极电流
600 mA
产品类别
Bipolar Transistors - BJT
SMBT2907AE6327XT拓展信息
Infineon
Infineon
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Infineon
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