Infineon SMBT3906E6327XT

包装/外壳

SOT-23-3

Qualification

AEC-Q101

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

330 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

Collector-Emitter Saturation Voltage

400 mV

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

54000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

250 MHz

Part # Aliases

SMBT SP000011680 E6327 3906 SMBT3906E6327HTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Maximum DC Collector Current

200 mA

RoHS

Details

Collector- Emitter Voltage VCEO Max

40 V

包装

MouseReel

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

40 V

连续集电极电流

200 mA

产品类别

Bipolar Transistors - BJT