SMBTA06E6327XT详情
Infineon SMBTA06E6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
Qualification
AEC-Q101
Emitter- Base Voltage VEBO
4 V
Pd - Power Dissipation
330 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
250 mV
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
39000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
100 MHz
Part # Aliases
SP000011686 SMBTA 06 E6327 SMBTA06E6327HTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Maximum DC Collector Current
1 A
RoHS
Details
Collector- Emitter Voltage VCEO Max
80 V
包装
Reel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
80 V
连续集电极电流
500 mA
产品类别
Bipolar Transistors - BJT
SMBTA06E6327XT拓展信息
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
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