Infineon SPB04N60C3

安装类型

表面贴装

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3-2

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

50W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.9V @ 200µA

操作温度

-55°C ~ 150°C (TJ)

系列

CoolMOS™

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

950mOhm @ 2.8A, 10V

输入电容(Ciss)(Max)@Vds

490 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

25 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

场效应管特性

-