Infineon SPP15P10PH

包装/外壳

TO-220-3

安装类型

通孔

供应商器件包装

PG-TO220-3-1

Package

零售包装

厂商

Glenair

Product Status

活跃

Continuous Drain Current Id

15

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

9.5 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

128 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Forward Transconductance - Min

9.3 S

Channel Mode

Enhancement

Part # Aliases

SP000683160 SPP15P1PHXK SPP15P10PHXKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

37 nC

Tradename

SIPMOS

Rds On - Drain-Source Resistance

240 mOhms

RoHS

Details

Typical Turn-Off Delay Time

33 ns

Id - Continuous Drain Current

15 A

Current - Continuous Drain (Id) @ 25℃

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

128W (Tc)

系列

*

包装

Tube

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

功率耗散

128

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

240mOhm @ 10.6A, 10V

不同 Id 时 Vgs(th)（最大值）

2.1V @ 1.54mA

输入电容(Ciss)(Max)@Vds

1280 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

48 nC @ 10 V

上升时间

23 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P

场效应管特性

-

产品类别

MOSFET

宽度

4.4 mm

高度

15.65 mm

长度

10 mm