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价格梯度
内地含税价
1
¥21.310184
10
¥20.103947
100
¥18.965988
500
¥17.892441
1000
¥16.879662
SPW35N60C3详情
Infineon SPW35N60C3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
Vds - Drain-Source Breakdown Voltage
600 V
Typical Turn-On Delay Time
10 ns
Vgs th - Gate-Source Threshold Voltage
2.1 V
Pd - Power Dissipation
313 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
240
Mounting Styles
通孔
Forward Transconductance - Min
36 S
Channel Mode
Enhancement
Part # Aliases
SPW35N6C3XK SP000014970 SPW35N60C3FKSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Qg - Gate Charge
150 nC
Tradename
CoolMOS
Rds On - Drain-Source Resistance
100 mOhms
RoHS
Details
Typical Turn-Off Delay Time
70 ns
Id - Continuous Drain Current
34.6 A
系列
CoolMOS C3
包装
Tube
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
5 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
宽度
5.21 mm
高度
21.1 mm
长度
16.13 mm
SPW35N60C3拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
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