Infineon SPW35N60C3

包装/外壳

TO-247-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

313 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Forward Transconductance - Min

36 S

Channel Mode

Enhancement

Part # Aliases

SPW35N6C3XK SP000014970 SPW35N60C3FKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

150 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

100 mOhms

RoHS

Details

Typical Turn-Off Delay Time

70 ns

Id - Continuous Drain Current

34.6 A

系列

CoolMOS C3

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

5 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

5.21 mm

高度

21.1 mm

长度

16.13 mm