Infineon Technologies BSC004NE2LS5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TDSON-8

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

40A (Ta), 479A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 10mA

Power Dissipation (Max)

2.5W (Ta), 188W (Tc)

Number of Elements per Chip

1

Package Type

TDSON

Qualification

-

Continuous Drain Current Id

479A

Vds - Drain-Source Breakdown Voltage

25 V

Typical Turn-On Delay Time

27.5 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

188 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

230 S

Channel Mode

Enhancement

Part # Aliases

BSC004NE2LS5 SP004950304

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

238 nC

Rds On - Drain-Source Resistance

540 uOhms

RoHS

Details

Typical Turn-Off Delay Time

67.6 ns

Id - Continuous Drain Current

479 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

188W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.45mOhm @ 30A, 10V

输入电容(Ciss)(Max)@Vds

11000 pF @ 12.5 V

门极电荷(Qg)(最大)@Vgs

238 nC @ 10 V

上升时间

88.2 ns

漏源电压 (Vdss)

25 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET