Infineon Technologies BSC0704LSATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8-6

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

11A (Ta), 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.1W (Ta), 36W (Tc)

Base Product Number

BSC0704

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

47A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

4 ns

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

36 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

22 S

Channel Mode

Enhancement

Part # Aliases

BSC0704LS SP001614068

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

9.4 nC

Rds On - Drain-Source Resistance

9.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

14 ns

Id - Continuous Drain Current

47 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

36W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

9.4mOhm @ 24A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 14μA

输入电容(Ciss)(Max)@Vds

1300 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

9.4 nC @ 4.5 V

上升时间

3 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET