Infineon Technologies BSC074N15NS5ATMA1

包装/外壳

8-PowerTDFN

安装类型

Surface Mount, Wettable Flank

引脚数

8

供应商器件包装

PG-TSON-8-3

Base Product Number

BSC074

Power Dissipation (Max)

214W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.6V @ 136μA

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Current - Continuous Drain (Id) @ 25℃

114A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Continuous Drain Current Id

114

Number of Elements per Chip

1

Package Type

SuperSO8 5 x 6

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

150 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

4.6 V

Pd - Power Dissipation

214 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000705 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

41 S

Channel Mode

Enhancement

Part # Aliases

BSC074N15NS5 SP004419136

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

41 nC

Rds On - Drain-Source Resistance

7.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

15 ns

Id - Continuous Drain Current

114 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

214

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.4mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

4000 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

52 nC @ 10 V

上升时间

4 ns

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET