Infineon Technologies BSC0803LSATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8-6

厂商

Infineon Technologies

Product Status

不用于新设计

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.5W (Ta), 52W (Tc)

Base Product Number

BSC0803

Continuous Drain Current Id

44

Number of Elements per Chip

1

Package Type

SuperSO8 5 x 6

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

5 ns

Vgs th - Gate-Source Threshold Voltage

1.7 V

Pd - Power Dissipation

52 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

19 S

Part # Aliases

BSC0803LS SP001614084

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

7.6 nC

Rds On - Drain-Source Resistance

15.8 mOhms

RoHS

Details

Typical Turn-Off Delay Time

14 ns

Id - Continuous Drain Current

44 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

52

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

14.6mOhm @ 22A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 23μA

输入电容(Ciss)(Max)@Vds

1300 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

10 nC @ 4.5 V

上升时间

3 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET